Granted Patent
Utility
US 5,336,640 · App. 07/826,145
Method of manufacturing a semiconductor device having an insulating layer composed of a BPSG film and a plasma-CVD silicon nitride film
Inventor:
Nobuyoshi Sato
Patented Case
View Patent ↗
Granted: Aug 9, 1994
Filed: Jan 27, 1992
Inventor
Nobuyoshi Sato
Assignee (at issue)
Kawasaki Steel Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.