Granted Patent
Utility
US 5,381,302 · App. 08/104,525
Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
Inventors:
Gurtej S. Sandhu, Pierre C. Fazan
Patented Case
View Patent ↗
Granted: Jan 10, 1995
Filed: Aug 10, 1993
Inventors
Gurtej S. Sandhu
Pierre C. Fazan
Assignee (at issue)
Micron Semiconductor, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.