Granted Patent
Utility
US 5,391,509 · App. 08/164,954
Method of manufacturing a semiconductor device forming a high concentration impurity region through a CVD insulating film
Inventors:
Naoki Matsukawa, Makoto Mizuno, Katsuhiro Shimazu
Patented Case
View Patent ↗
Granted: Feb 21, 1995
Filed: Dec 10, 1993
Inventors
Naoki Matsukawa
Makoto Mizuno
Katsuhiro Shimazu
Assignee (at issue)
Kawasaki Steel Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.