Granted Patent
Utility
US 5,399,389 · App. 08/094,337
Method for locally and globally planarizing chemical vapor deposition of SiO.sub.2 layers onto structured silicon substrates
Inventors:
Konrad Hieber, Jasper Von Tomkewitsch, Oswald Spindler, Helmuth Treichel, Zvonimir Gabric, Alexander Gschwandtner
Patented Case
View Patent ↗
Granted: Mar 21, 1995
Filed: Jul 20, 1993
Inventors
Konrad Hieber
Jasper Von Tomkewitsch
Oswald Spindler
Helmuth Treichel
Zvonimir Gabric
Alexander Gschwandtner
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.