IP Library Granted Patent US 5,408,952
Granted Patent Utility
US 5,408,952 · App. 07/962,185

Single crystal growth method

Inventors: Daisuke Wakabayashi, Toshio Anbe, Masao Saitoh
Patented Case View Patent ↗
Granted: Apr 25, 1995 Filed: Dec 28, 1992
Inventors
Daisuke Wakabayashi
Toshio Anbe
Masao Saitoh
Assignees (at issue)
MITSUBISHI MATERIALS CORPORATION
Mitsubishi Materials Silicon Corp.

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Quick Facts
Patent No.
US 5,408,952
App. No.
07/962,185
Filed
1992-12-28
Granted
1995-04-25
Kind
A