Granted Patent
Utility
US 5,438,214 · App. 08/258,351
Metal oxide semiconductor device having a common gate electrode for N and P channel MOS transistors
Inventors:
Yuichi Egawa, Yasuo Sato
Patented Case
View Patent ↗
Granted: Aug 1, 1995
Filed: May 31, 1994
Inventors
Yuichi Egawa
Yasuo Sato
Assignee (at issue)
NIPPON STEEL CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.