Granted Patent
Utility
US 5,440,160 · App. 08/177,847
High saturation current, low leakage current fermi threshold field effect transistor
Inventor:
Albert W. Vinal
Patented Case
View Patent ↗
Granted: Aug 8, 1995
Filed: Jan 5, 1994
Inventor
Albert W. Vinal
Assignee (at issue)
Thunderbird Technologies, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.