IP Library › Granted Patent US 5,441,595
Granted Patent Utility
US 5,441,595 · App. 08/238,370

Dry etching apparatus and method of forming a via hole in an interlayer insulator using same

Inventors: Yasushi Yamagata, Fumihide Sato
Patented Case View Patent ↗
Granted: Aug 15, 1995 Filed: May 5, 1994
Inventors
Yasushi Yamagata
Fumihide Sato
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,441,595
App. No.
08/238,370
Filed
1994-05-05
Granted
1995-08-15
Kind
A