Granted Patent
Utility
US 5,443,992 · App. 08/332,733
Method for manufacturing an integrated circuit having at least one MOS transistor
Inventors:
Lothar Risch, Thomas Vogelsang, Franz Hofmann, Karl Robert Hofmann
Patented Case
View Patent ↗
Granted: Aug 22, 1995
Filed: Nov 1, 1994
Inventors
Lothar Risch
Thomas Vogelsang
Franz Hofmann
Karl Robert Hofmann
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.