IP Library › Granted Patent US 5,448,517
Granted Patent Utility
US 5,448,517 · App. 08/288,219

Electrically programmable nonvolatile semiconductor memory device with NAND cell structure

Inventor: Hiroshi Iwahashi
Patented Case View Patent ↗
Granted: Sep 5, 1995 Filed: Aug 9, 1994
Inventor
Hiroshi Iwahashi
Assignee (at issue)
Kabushiki Kaisha Toshiba

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Quick Facts
Patent No.
US 5,448,517
App. No.
08/288,219
Filed
1994-08-09
Granted
1995-09-05
Kind
A