Granted Patent
Utility
US 5,474,022 · App. 08/420,350
Double crucible for growing a silicon single crystal
Inventors:
Keisei Abe, Hisashi Furuya, Norihisa Machida, Yoshiaki Arai
Patented Case
View Patent ↗
Granted: Dec 12, 1995
Filed: Apr 11, 1995
Inventors
Keisei Abe
Hisashi Furuya
Norihisa Machida
Yoshiaki Arai
Assignees (at issue)
MITSUBISHI MATERIALS CORPORATION
Mitsubishi Materials Silicon Corp.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.