Granted Patent
Utility
US 5,534,446 · App. 08/534,169
Process for producing buried insulator layer in semiconductor substrate
Inventors:
Masaharu Tachimori, Takayuki Yano, Yasuo Tsumori, Tatsuo Nakajima, Isao Hamaguchi
Patented Case
View Patent ↗
Granted: Jul 9, 1996
Filed: Sep 26, 1995
Inventors
Masaharu Tachimori
Takayuki Yano
Yasuo Tsumori
Tatsuo Nakajima
Isao Hamaguchi
Assignee (at issue)
NIPPON STEEL CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.