Granted Patent
Utility
US 5,563,093 · App. 08/431,822
Method of manufacturing fet semiconductor devices with polysilicon gate having large grain sizes
Inventors:
Munetaka Koda, Yoshikatsu Shida, Junichi Kawaguchi, Takehiro Murakami, Yoshio Kaneko
Patented Case
View Patent ↗
Granted: Oct 8, 1996
Filed: May 1, 1995
Inventors
Munetaka Koda
Yoshikatsu Shida
Junichi Kawaguchi
Takehiro Murakami
Yoshio Kaneko
Assignee (at issue)
Kawasaki Steel Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.