Granted Patent
Utility
US 5,578,510 · App. 08/547,157
Method of making an isolation layer stack semiconductor device
Inventor:
Tomofune Tani
Patented Case
View Patent ↗
Granted: Nov 26, 1996
Filed: Oct 24, 1995
Inventor
Tomofune Tani
Assignee (at issue)
NIPPON STEEL CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.