Granted Patent
Utility
US 5,617,357 · App. 08/420,989
Flash EEPROM memory with improved discharge speed using substrate bias and method therefor
Inventors:
Sameer Haddad, Hao Fang
Patented Case
View Patent ↗
Granted: Apr 1, 1997
Filed: Apr 7, 1995
Inventors
Sameer Haddad
Hao Fang
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.