IP Library › Granted Patent US 5,622,890
Granted Patent Utility
US 5,622,890 · App. 08/279,027

Method of making contact regions for narrow trenches in semiconductor devices

Inventors: James D. Beasom, Dustin A. Woodbury
Patented Case View Patent ↗
Granted: Apr 22, 1997 Filed: Jul 22, 1994
Inventors
James D. Beasom
Dustin A. Woodbury
Assignee (at issue)
HARRIS CORPORATION

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Quick Facts
Patent No.
US 5,622,890
App. No.
08/279,027
Filed
1994-07-22
Granted
1997-04-22
Kind
A