Granted Patent
Utility
US 5,631,198 · App. 08/590,984
Method for making a piezoresistive pressure sensor of semiconductor material employing anisotropic etching
Inventor:
Siegbert Hartauer
Patented Case
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Granted: May 20, 1997
Filed: Jan 24, 1996
Inventor
Siegbert Hartauer
Assignee (at issue)
TEXAS INSTRUMENTS DEUTSCHLAND GMBH
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.