IP Library › Granted Patent US 5,672,551
Granted Patent Utility
US 5,672,551 · App. 08/462,176

Method for manufacturing a semiconductor pressure sensor with single-crystal silicon diaphragm and single-crystal gage elements

Inventor: Clifford D. Fung
Patented Case View Patent ↗
Granted: Sep 30, 1997 Filed: Jun 5, 1995
Inventor
Clifford D. Fung
Assignee (at issue)
Fox Boro Company

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Quick Facts
Patent No.
US 5,672,551
App. No.
08/462,176
Filed
1995-06-05
Granted
1997-09-30
Kind
A