Granted Patent
Utility
US 5,675,163 · App. 08/547,247
Non-volatile semiconductor memory device with thin insulation layer below erase gate
Inventor:
Takeshi Okazawa
Patented Case
View Patent ↗
Granted: Oct 7, 1997
Filed: Oct 24, 1995
Inventor
Takeshi Okazawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.