IP Library › Granted Patent US 5,675,163
Granted Patent Utility
US 5,675,163 · App. 08/547,247

Non-volatile semiconductor memory device with thin insulation layer below erase gate

Inventor: Takeshi Okazawa
Patented Case View Patent ↗
Granted: Oct 7, 1997 Filed: Oct 24, 1995
Inventor
Takeshi Okazawa
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,675,163
App. No.
08/547,247
Filed
1995-10-24
Granted
1997-10-07
Kind
A