Granted Patent
Utility
US 5,684,317 · App. 08/483,699
MOS transistor and method of manufacturing thereof
Inventor:
Hyun-Sang Hwang
Patented Case
View Patent ↗
Granted: Nov 4, 1997
Filed: Jun 7, 1995
Inventor
Hyun-Sang Hwang
Assignee (at issue)
LG ELECTRONICS INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.