Granted Patent
Utility
US 5,693,964 · App. 08/670,931
Field-effect transistor and fabrication method
Inventors:
Yorito Ohta, Kaoru Inoue, Mitsuru Tanabe
Patented Case
View Patent ↗
Granted: Dec 2, 1997
Filed: Jun 26, 1996
Inventors
Yorito Ohta
Kaoru Inoue
Mitsuru Tanabe
Assignee (at issue)
Matsushita Electronics Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.