Granted Patent
Utility
US 5,766,991 · App. 08/705,072
CMOS process utilizing disposable silicon nitride spacers for making lightly doped drain
Inventor:
Teh-Yi J. Chen
Patented Case
View Patent ↗
Granted: Jun 16, 1998
Filed: Aug 29, 1996
Inventor
Teh-Yi J. Chen
Assignee (at issue)
U.S. Philips Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.