IP Library › Granted Patent US 5,780,329
Granted Patent Utility
US 5,780,329 · App. 08/832,245

Process for fabricating a moderate-depth diffused emitter bipolar transistor in a BICMOS device without using an additional mask

Inventors: Todd A. Randazzo, John J. Seliskar
Patented Case View Patent ↗
Granted: Jul 14, 1998 Filed: Apr 3, 1997
Inventors
Todd A. Randazzo
John J. Seliskar
Assignee (at issue)
Symbios, Inc.

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Quick Facts
Patent No.
US 5,780,329
App. No.
08/832,245
Filed
1997-04-03
Granted
1998-07-14
Kind
A