Granted Patent
Utility
US 5,789,800 · App. 08/785,611
Bipolar transistor having an improved epitaxial base region
Inventor:
Hiroshi Kohno
Patented Case
View Patent ↗
Granted: Aug 4, 1998
Filed: Jan 17, 1997
Inventor
Hiroshi Kohno
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.