Granted Patent
Utility
US 5,814,858 · App. 08/616,393
Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer
Inventor:
Richard K. Williams
Patented Case
View Patent ↗
Granted: Sep 29, 1998
Filed: Mar 15, 1996
Inventor
Richard K. Williams
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.