IP Library › Granted Patent US 5,821,136
Granted Patent Utility
US 5,821,136 · App. 08/698,129

Inverted field-effect device with polycrystalline silicon/germanium channel

Inventors: Tsiu C. Chan, Yu-Pin Han, Elmer H. Guritz, Richard A. Blanchard
Patented Case View Patent ↗
Granted: Oct 13, 1998 Filed: Aug 15, 1996
Inventors
Tsiu C. Chan
Yu-Pin Han
Elmer H. Guritz
Richard A. Blanchard
Assignee (at issue)
STMICROELECTRONICS, INC.

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Quick Facts
Patent No.
US 5,821,136
App. No.
08/698,129
Filed
1996-08-15
Granted
1998-10-13
Kind
A