IP Library Granted Patent US 5,834,827
Granted Patent Utility
US 5,834,827 · App. 08/748,835

Thin film semiconductor device, fabrication method thereof, electronic device and its fabrication method

Inventors: Mitsutoshi Miyasaka, Kiyofumi Kitawada, Minoru Matsuo, Seiichiro Higashi, Tokuroh Ozawa, Satoshi Takenaka, Yojiro Matsueda, Takashi Nakazawa, Hiroyuki Ohshima, Satoshi Inoue
Patented Case View Patent ↗
Granted: Nov 10, 1998 Filed: Nov 14, 1996
Inventors
Mitsutoshi Miyasaka
Kiyofumi Kitawada
Minoru Matsuo
Seiichiro Higashi
Tokuroh Ozawa
Satoshi Takenaka
Yojiro Matsueda
Takashi Nakazawa
Hiroyuki Ohshima
Satoshi Inoue
Assignee (at issue)
SEIKO EPSON CORPORATION

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Quick Facts
Patent No.
US 5,834,827
App. No.
08/748,835
Filed
1996-11-14
Granted
1998-11-10
Kind
A