IP Library › Granted Patent US 5,838,053
Granted Patent Utility
US 5,838,053 · App. 08/724,267

Method of forming a cadmium telluride/silicon structure

Inventors: Malcolm J. Bevan, Hung-Dah Shih
Patented Case View Patent ↗
Granted: Nov 17, 1998 Filed: Sep 19, 1996
Inventors
Malcolm J. Bevan
Hung-Dah Shih
Assignee (at issue)
Raytheon TI Systems, Inc.

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Quick Facts
Patent No.
US 5,838,053
App. No.
08/724,267
Filed
1996-09-19
Granted
1998-11-17
Kind
A