Granted Patent
Utility
US 5,858,085 · App. 08/864,721
Method for growing a semiconductor single-crystal
Inventors:
Yoshiaki Arai, Keisei Abe, Norihisa Machida
Patented Case
View Patent ↗
Granted: Jan 12, 1999
Filed: May 28, 1997
Inventors
Yoshiaki Arai
Keisei Abe
Norihisa Machida
Assignees (at issue)
MITSUBISHI MATERIALS CORPORATION
Mitsubishi Materials Silicon Corp.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.