IP Library › Granted Patent US 5,870,330
Granted Patent Utility
US 5,870,330 · App. 08/774,911

Method of making and structure of SRAM storage cell with N channel thin film transistor load devices

Inventors: Tsiu C. Chan, Loi N. Nguyen
Patented Case View Patent ↗
Granted: Feb 9, 1999 Filed: Dec 27, 1996
Inventors
Tsiu C. Chan
Loi N. Nguyen
Assignee (at issue)
STMICROELECTRONICS, INC.

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Quick Facts
Patent No.
US 5,870,330
App. No.
08/774,911
Filed
1996-12-27
Granted
1999-02-09
Kind
A