Granted Patent
Utility
US 5,891,782 · App. 08/918,678
Method for fabricating an asymmetric channel doped MOS structure
Inventors:
Sheng Teng Hsu, Jong-Jan Lee
Patented Case
View Patent ↗
Granted: Apr 6, 1999
Filed: Aug 21, 1997
Inventors
Sheng Teng Hsu
Jong-Jan Lee
Assignees (at issue)
Sharp Microelectronics Technology Inc.
SHARP KABUSHIKI KAISHA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.