IP Library › Granted Patent US 5,895,957
Granted Patent Utility
US 5,895,957 · App. 08/778,669

Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer

Inventors: Ronald E. Reedy, Mark L. Burgener
Patented Case View Patent ↗
Granted: Apr 20, 1999 Filed: Jan 3, 1997
Inventors
Ronald E. Reedy
Mark L. Burgener
Assignee (at issue)
Peregrine Semiconductor Corporation

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Quick Facts
Patent No.
US 5,895,957
App. No.
08/778,669
Filed
1997-01-03
Granted
1999-04-20
Kind
A