Granted Patent
Utility
US 5,904,525 · App. 08/646,593
Fabrication of high-density trench DMOS using sidewall spacers
Inventors:
Fwu-Iuan Hshieh, Yueh-Se Ho, Bosco Lan, Jowei Dun
Patented Case
View Patent ↗
Granted: May 18, 1999
Filed: May 8, 1996
Inventors
Fwu-Iuan Hshieh
Yueh-Se Ho
Bosco Lan
Jowei Dun
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.