IP Library › Granted Patent US 5,960,311
Granted Patent Utility
US 5,960,311 · App. 08/911,291

Method for forming controlled voids in interlevel dielectric

Inventors: Abha Singh, Artur P. Balasinski, Ming Li
Patented Case View Patent ↗
Granted: Sep 28, 1999 Filed: Aug 14, 1997
Inventors
Abha Singh
Artur P. Balasinski
Ming Li
Assignee (at issue)
STMICROELECTRONICS, INC.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 5,960,311
App. No.
08/911,291
Filed
1997-08-14
Granted
1999-09-28
Kind
A