Granted Patent
Utility
US 5,972,800 · App. 08/890,312
Method for fabricating a semiconductor device with multi-level structured insulator
Inventor:
Eiji Hasegawa
Patented Case
View Patent ↗
Granted: Oct 26, 1999
Filed: Jul 9, 1997
Inventor
Eiji Hasegawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.