IP Library Granted Patent US 5,981,345
Granted Patent Utility
US 5,981,345 · App. 08/891,013

Si/SiGe MOSFET and method for fabricating the same

Inventors: Byung-Ryul Ryum, Soo Min Lee, Deok-Ho Cho, Tae-Hyeon Han
Patented Case View Patent ↗
Granted: Nov 9, 1999 Filed: Jul 10, 1997
Inventors
Byung-Ryul Ryum
Soo Min Lee
Deok-Ho Cho
Tae-Hyeon Han
Assignee (at issue)
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 5,981,345
App. No.
08/891,013
Filed
1997-07-10
Granted
1999-11-09
Kind
A