IP Library › Granted Patent US 5,981,351
Granted Patent Utility
US 5,981,351 · App. 09/184,856

Method of forming capacitor of a semiconductor device and a semiconductor capacitor formed thereby

Inventors: Ki-huem Nam, Hyun Ung Han, Jin-O Choi
Patented Case View Patent ↗
Granted: Nov 9, 1999 Filed: Nov 3, 1998
Inventors
Ki-huem Nam
Hyun Ung Han
Jin-O Choi
Assignee (at issue)
SAMSUNG ELECTRONICS SO., LTD

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Quick Facts
Patent No.
US 5,981,351
App. No.
09/184,856
Filed
1998-11-03
Granted
1999-11-09
Kind
A