Granted Patent
Utility
US 6,022,788 · App. 08/996,457
Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby
Inventors:
Todd H. Gandy, Ronald K. Sampson, Robert Louis Hodges
Patented Case
View Patent ↗
Granted: Feb 8, 2000
Filed: Dec 23, 1997
Inventors
Todd H. Gandy
Ronald K. Sampson
Robert Louis Hodges
Assignee (at issue)
STMICROELECTRONICS, INC.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.