IP Library › Granted Patent US 6,030,847
Granted Patent Utility
US 6,030,847 · App. 08/572,392

Method for forming a storage cell capacitor compatible with high dielectric constant materials

Inventors: Pierre C. Fazan, Viju K. Mathews
Patented Case View Patent ↗
Granted: Feb 29, 2000 Filed: Dec 14, 1995
Inventors
Pierre C. Fazan
Viju K. Mathews
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,030,847
App. No.
08/572,392
Filed
1995-12-14
Granted
2000-02-29
Kind
A