IP Library Granted Patent US 6,031,262
Granted Patent Utility
US 6,031,262 · App. 08/970,288

Semiconductor memory device having capacitor-over-bitline cell with multiple cylindrical storage electrode offset from node contact and process of fabrication thereof

Inventor: Masato Sakao
Patented Case View Patent ↗
Granted: Feb 29, 2000 Filed: Nov 14, 1997
Inventor
Masato Sakao
Assignee (at issue)
NEC CORPORATION

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,031,262
App. No.
08/970,288
Filed
1997-11-14
Granted
2000-02-29
Kind
A