Granted Patent
Utility
US 6,056,817 · App. 08/823,684
Process for producing semi-insulating InP single crystal and semi-insulating InP single crystal substrate
Inventors:
Masayuki Uchida, Osamu Oda
Patented Case
View Patent ↗
Granted: May 2, 2000
Filed: Mar 25, 1997
Inventors
Masayuki Uchida
Osamu Oda
Assignee (at issue)
Japan Energy Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.