Granted Patent
Utility
US 6,066,528 · App. 08/314,117
Method for forming a capacitor compatible with high dielectric constant materials having two independent insulative layers
Inventors:
Pierre C. Fazan, Gurtej S. Sandhu
Patented Case
View Patent ↗
Granted: May 23, 2000
Filed: Sep 27, 1994
Inventors
Pierre C. Fazan
Gurtej S. Sandhu
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.