Granted Patent
Utility
US 6,069,046 · App. 08/979,282
Transistor fabrication employing implantation of dopant into junctions without subjecting sidewall surfaces of a gate conductor to ion bombardment
Inventors:
Mark I. Gardner, Daniel Kadosh, Michael Duane
Patented Case
View Patent ↗
Granted: May 30, 2000
Filed: Nov 26, 1997
Inventors
Mark I. Gardner
Daniel Kadosh
Michael Duane
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.