Granted Patent
Utility
US 6,077,345 · App. 08/833,857
Silicon crystal growth melt level control system and method
Inventors:
John R. Easoz, Takashi Isobe
Patented Case
View Patent ↗
Granted: Jun 20, 2000
Filed: Apr 10, 1997
Inventors
John R. Easoz
Takashi Isobe
Assignee (at issue)
Ebara Solar, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.