IP Library › Granted Patent US 6,080,614
Granted Patent Utility
US 6,080,614 · App. 08/885,877

Method of making a MOS-gated semiconductor device with a single diffusion

Inventors: John Manning Savidge Neilson, Linda S. Brush, Frank Stensney, John L. Benjamin, Anup Bhalla, Christopher L. Rexer, Richard Stokes, Christopher Boguslow Kocon, Louise Skurkey, Christopher Michael Scarba
Patented Case View Patent ↗
Granted: Jun 27, 2000 Filed: Jun 30, 1997
Inventors
John Manning Savidge Neilson
Linda S. Brush
Frank Stensney
John L. Benjamin
Anup Bhalla
Christopher L. Rexer
Richard Stokes
Christopher Boguslow Kocon
Louise Skurkey
Christopher Michael Scarba

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

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Quick Facts
Patent No.
US 6,080,614
App. No.
08/885,877
Filed
1997-06-30
Granted
2000-06-27
Kind
A