Granted Patent
Utility
US 6,080,615 · App. 09/002,679
Method for forming a semiconductor device incorporating a dummy gate electrode
Inventors:
Chang Jae Lee, Jun Ki Kim
Patented Case
View Patent ↗
Granted: Jun 27, 2000
Filed: Jan 5, 1998
Inventors
Chang Jae Lee
Jun Ki Kim
Assignee (at issue)
LG Semicon Co., Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.