IP Library › Granted Patent US 6,087,709
Granted Patent Utility
US 6,087,709 · App. 09/379,391

Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby

Inventors: Todd H. Gandy, Ronald K. Sampson, Robert Louis Hodges
Patented Case View Patent ↗
Granted: Jul 11, 2000 Filed: Aug 23, 1999
Inventors
Todd H. Gandy
Ronald K. Sampson
Robert Louis Hodges
Assignee (at issue)
STMICROELECTRONICS, INC.

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Quick Facts
Patent No.
US 6,087,709
App. No.
09/379,391
Filed
1999-08-23
Granted
2000-07-11
Kind
A