Granted Patent
Utility
US 6,107,134 · App. 09/431,134
High performance DRAM structure employing multiple thickness gate oxide
Inventors:
Nicky C. Lu, Kun-Zen Chang
Patented Case
View Patent ↗
Granted: Aug 22, 2000
Filed: Nov 1, 1999
Inventors
Nicky C. Lu
Kun-Zen Chang
Assignee (at issue)
Etron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.