Granted Patent
Utility
US 6,114,197 · App. 09/031,143
Method of forming fully depleted SIMOX CMOS having electrostatic discharge protection
Inventor:
Sheng Teng Hsu
Patented Case
View Patent ↗
Granted: Sep 5, 2000
Filed: Feb 26, 1998
Inventor
Sheng Teng Hsu
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.