IP Library › Granted Patent US 6,114,217
Granted Patent Utility
US 6,114,217 · App. 09/199,706

Method for forming isolation trenches on a semiconductor substrate

Inventor: Young Tack PARK
Patented Case View Patent ↗
Granted: Sep 5, 2000 Filed: Nov 24, 1998
Inventor
Young Tack PARK
Assignees (at issue)
Anam Semiconductor
Amkor Technology, Inc.

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Quick Facts
Patent No.
US 6,114,217
App. No.
09/199,706
Filed
1998-11-24
Granted
2000-09-05
Kind
A